Optical and Electrical Properties of SnO2:F Thin Films Obtained by R.F. Sputtering With Various Targets
Open Access
- 9 August 1990
- journal article
- Published by Wiley in Active and Passive Electronic Components
- Vol. 14 (3) , 111-118
- https://doi.org/10.1155/1991/85965
Abstract
Tin oxide films were deposited on glass substrates by reactive and non reactive r.f. sputtering using different types of targets corresponding to various Sn/F atomic ratio: hot pressed Sn–SnF2 or SnO2–SnF2 mixtures, ceramics obtained by casting either an aqueous SnO2–SnF2 slurry or a suspension of tin oxide in molten tin fluoride. The samples were prepared in oxygen‐argon gas mixtures in which the oxygen concentration was varied from 0 mole % up to 30 mole% depending on the target. The optical and electrical properties of the obtained thin films have been studied and compared to those of the films obtained by spray technique.Keywords
Funding Information
- GRL (Elf-Aquitaine)
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