Enhanced conductivity of zinc oxide thin films by ion implantation of hydrogen atoms
- 23 May 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (21) , 2876-2878
- https://doi.org/10.1063/1.111401
Abstract
Enhancement of the conductivity of zinc oxide through doping with hydrogen atoms was examined by using ion implantation of highly resistive thin films deposited by rf magnetron sputtering at room temperature. With a doping of 1×1017 atoms cm−2, the conductivity after annealing at 200 °C in an N2 atmosphere at 1 atm rose from the initial 1×10−7 Ω−1 cm−1 to 5.5×102 Ω−1 cm−1.Keywords
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