Design and fabrication of planar, resonant Franz-Keldysh optical modulator

8 December 1988

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 24 (25) , 1546-1547
https://doi.org/10.1049/el:19881055

Abstract

We describe the design, fabrication and performance of a planar, resonant Franz-Keldysh modulator which has produced a 38% transmission change for 20 V applied bias. The device consists of a reverse-biased GaAs pin diode grown by MOVPE and from which the substrate has been removed.

Keywords

GAAS
PIN DIODE
APPLIED BIAS
TRANSMISSION CHANGE
RESONANT FRANZ-KELDYSH OPTICAL MODULATOR
MOVPE