An adiabatic model of dispersive hopping transport II. Dispersive carrier recombination in hopping systems
- 1 July 1994
- journal article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 70 (1) , 59-66
- https://doi.org/10.1080/01418639408240194
Abstract
A model of dispersive hopping recombination is presented. Carrier recombination under a non-equilibrium conditions is shown to have characteristic features of an adiabatic process. Time dependencies of carrier density and transient photocurrent are governed by the time dependence of the density of “deep” localized states. An adiabatic equation of dispersive recombination is derived. The general results are applied to the low-temperature recombination and to systems having an exponential distribution of localized states.Keywords
This publication has 21 references indexed in Scilit:
- Effective temperature of hopping electrons in a strong electric fieldPhysical Review B, 1992
- Current Overshoot in Polymers under Continuous IrradiationPhysica Status Solidi (a), 1992
- Sign-alternating kinetics of radiation-induced current in disordered dielectricsInternational Journal of Electronics, 1992
- Electronic transport and recombination in amorphous semiconductors at low temperaturesPhysical Review Letters, 1989
- Anomalous transient photocurrent in disordered semiconductors: Theory and experimentSolid State Communications, 1983
- Carrier diffusion in amorphous semiconductorsReports on Progress in Physics, 1983
- Luminescence and recombination in hydrogenated amorphous siliconAdvances in Physics, 1981
- A physical interpretation of dispersive transport in disordered semiconductorsSolid State Communications, 1981
- An Analysis of the Dispersive Charge Transport in Vitreous 0.55 As2S3: 0.45 Sb2S3Physica Status Solidi (a), 1979
- X-ray induced conductivity in insulating materialsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1956