Temperature dependence of dc drift of Ti:LiNbO3 optical modulators with sputter deposited SiO2 buffer layer
- 1 May 1993
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 73 (9) , 4162-4164
- https://doi.org/10.1063/1.352849
Abstract
The temperature dependence of the dc drift of Mach–Zehnder external modulators is evaluated based on Ti diffused LiNbO3 with a sputter deposited SiO2 buffer layer. From Arrhenius’ plots of the results, activation energies of the drift rate between 25 and 80 °C were found to be about 1 eV. The activation energy seems to depend on the structural parameters of the SiO2 layer.This publication has 8 references indexed in Scilit:
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