Tungsten as a marker in thin-film diffusion studies
- 1 August 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 29 (3) , 159-161
- https://doi.org/10.1063/1.89007
Abstract
Vacuum‐deposited tungsten of about 30‐Å thickness has been used as a diffusion marker in the reaction between a thin Co film and Si. In order to produce a discontinuous W film, it is necessary first to deposit a Sn film with island structure and then W, after which the Sn is dissolved. It was found by MeV He+ backscattering analysis that the W is located at the Co‐Co2Si interface, which means that Co is the dominant diffuser in Co2Si.Keywords
This publication has 5 references indexed in Scilit:
- Cobalt silicide layers on Si. I. Structure and growthJournal of Applied Physics, 1975
- Implanted noble gas atoms as diffusion markers in silicide formationThin Solid Films, 1975
- Microstructure of xenon−implanted siliconJournal of Vacuum Science and Technology, 1975
- Stopping cross sections and backscattering factors for 4He ions in matter Z = 1–92, E(4He) = 400–4000 keVAtomic Data and Nuclear Data Tables, 1974
- The Use of Rutherford Backscattering to Study the Behavior of Ion-Implanted Atoms During Anodic Oxidation of Aluminum: Ar, Kr, Xe, K, Rb, Cs, Cl, Br, and lJournal of the Electrochemical Society, 1973