Characterization of p-GaAs by low pressure MOCVD using DEZ as dopant
- 1 August 1984
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 67 (3) , 472-476
- https://doi.org/10.1016/0022-0248(84)90039-3
Abstract
No abstract availableKeywords
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