Chemical effects of annealing ZnS capped anodic fluoride films on Hg1−xCdxTe (x∼0.2)
- 1 July 1991
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 9 (4) , 2235-2238
- https://doi.org/10.1116/1.577301
Abstract
The chemical effects of annealing a three‐phase structure: ZnS–anodic fluoride–Hg1−x Cd x Te used in infrared detector devices were studied using Auger electron spectroscopy(AES). The ZnS cap prevents the oxidation of the anodic fluoride upon annealing. The anodic fluoride is unstable in contact with the ZnS and a reaction takes place at their interface forming the stable ZnF2 compound and Te or HgTe. Nevertheless, the annealing does not affect the film–substrate interface as long as the fluoride has not reacted completely. This explains the relative thermal stability of electrical devices fabricated using this passivation scheme.Keywords
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