Velocity of surface carriers in inversion layers on silicon
- 1 January 1980
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 23 (1) , 35-40
- https://doi.org/10.1016/0038-1101(80)90165-3
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperatureIEEE Transactions on Electron Devices, 1975
- Carrier mobilities at weakly inverted silicon surfacesJournal of Applied Physics, 1974
- Mobility parameters and metal-oxidesemiconductor-transistor propertiesElectronics Letters, 1972
- Threshold voltage variations with temperature in MOS transistorsIEEE Transactions on Electron Devices, 1971
- Hot Electron Effects and Saturation Velocities in Silicon Inversion LayersJournal of Applied Physics, 1970
- Electron and hole mobilities in inversion layers on thermally oxidized silicon surfacesIEEE Transactions on Electron Devices, 1965