Simple analytical models for the temperature dependent threshold behavior of depletion-mode devices
- 1 April 1979
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 26 (4) , 501-508
- https://doi.org/10.1109/t-ed.1979.19453
Abstract
Threshold voltage shifts in ion-implanted depletion-mode MOSFET's depart substantially from the usual dose proportional shift of enhancement-mode devices. Analytic expressions for the relationship between threshold voltage shift and implanted donor dose and position are extended to include impurity freezeout at low temperatures, and a simple model for the observed low substrate sensitivity at low temperature is presented. Criteria to avoid parasitic subthreshold conduction in depletion-mode devices are also established using the threshold shift formulation.Keywords
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