Enhanced magnetoresistance in layered magnetic structures with antiferromagnetic interlayer exchange

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Abstract
The electrical resistivity of Fe-Cr-Fe layers with antiferromagnetic interlayer exchange increases when the magnetizations of the Fe layers are aligned antiparallel. The effect is much stronger than the usual anisotropic magnetoresistance and further increases in structures with more than two Fe layers. It can be explained in terms of spin-flip scattering of conduction electrons caused by the antiparallel alignment of the magnetization.