GaN MESFETs on (111) Si substrate grown by MOCVD
- 12 October 2000
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 36 (21) , 1816-1818
- https://doi.org/10.1049/el:20001282
Abstract
A GaN metal-semiconductor field-effect transistor (MESFET) has been grown on (111) Si substrate by metalorganic chemical vapour deposition using Al0.27Ga0.73N/AlN intermediate layers. The device showed a maximum extrinsic transconductance 25 mS/mm and a drain-source current 169 mA/mm with a complete pinch-off for the 2.5 µm gate-length. The Al0.27Ga0.73N/AlN intermediate layers were effective in obtaining a mirror-like surface morphology and a high-resistive undoped GaN layer beneath a channel layer. The GaN MESFET on Si also exhibited no self-heating effects (drain-source current reduction) under high-power conditions, which results from the better thermal properties of Si than those of sapphire.Keywords
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