Silicon technology
- 1 August 1979
- journal article
- research article
- Published by Wiley in Materialwissenschaft und Werkstofftechnik
- Vol. 10 (8) , 262-275
- https://doi.org/10.1002/mawe.19790100807
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- The formation of swirl defects in silicon by agglomeration of self-interstitialsJournal of Crystal Growth, 1977
- Doping of Silicon by Neutron IrradiationJournal of the Electrochemical Society, 1975
- Penetration of Gold and Platinum Through Phosphorus‐Doped N+ Layers in SiliconJournal of the Electrochemical Society, 1975
- Diffusion Gettering of Au and Cu in SiliconJournal of the Electrochemical Society, 1975
- Study of the enhanced solubility and lattice location of gold impurities in a heavily phosphorus−diffused layer of siliconJournal of Applied Physics, 1975
- Kohlenstoffbestimmung in Silicium — Ein Beispiel für die Problematik analytischer Untersuchungen im ppm-BereichAnalytical and Bioanalytical Chemistry, 1972
- Growth of Silicon Crystals Free from DislocationsJournal of Applied Physics, 1959
- Crystallization of Silicon from a Floating Liquid ZonePhysical Review B, 1953
- Preparation of Hyper-Pure SiliconJournal of the Electrochemical Society, 1949
- Über die Herstellung und einige Eigenschaften von reinem metallischen SiliciumAngewandte Chemie, 1927