Current-voltage characteristics of amorphous As2Te3 monocrystalline GaAs heterojunctions
- 1 December 1977
- journal article
- Published by Springer Nature in Czechoslovak Journal of Physics
- Vol. 27 (12) , 1409-1412
- https://doi.org/10.1007/bf01588772
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- The density of states at the fermi level of the non-crystalline semiconductorsCzechoslovak Journal of Physics, 1976
- Transport properties of glass-silicon heterojunctionsJournal of Applied Physics, 1976
- A new type of junction: Amorphous/crystallineC R C Critical Reviews in Solid State Sciences, 1975
- The mobility of photo-induced carriers in disordered As2Te3and As30Te48Si12Ge10Philosophical Magazine, 1975
- Photoelectric phenomena in amorphous chalcogenide semiconductorsPhysica Status Solidi (a), 1973