Level Structure ofGa66

The excited levels of ${\mathrm{Ga}}^{66}$ have been investigated from the decay of ${\mathrm{Ge}}^{66}$ with high resolution Ge(Li) and Si(Li) detectors and with standard scintillation counters. ${\mathrm{Ge}}^{66}$ was produced by the ($\alpha ,2n$) reaction on enriched ${\mathrm{Zn}}^{64}$. A chemical separation for Ge was performed. $\gamma$ rays of the following energies (in keV) and intensities have been assigned to the decay of ${\mathrm{Ge}}^{66}$: 44.3±0.5 (70), 65±0.5 (17), 91±0.5 (2), 109.3±0.5 (43), 125±0.5 (1), 148±0.5 (1), 155±0.5 (${\mathrm{Ga}}^{66}$ is given. The spin and parity assignments of some of the low excited levels of ${\mathrm{Ga}}^{66}$ are discussed. The half-lives of the 44.3- and 109.3-keV levels have been measured by delayed coincidence to be (12±1)×${10}^{-9\mathrm{}}$ sec and (1.2×0.2)×${10}^{-9\mathrm{}}$ sec, respectively.