Raman and Photoluminescence Studies of Undoped and Magnesium-Doped Gan Films on Sapphire

This publication has 13 references indexed in Scilit:

• Electron-spin-resonance studies of donors in wurtzite GaN
  Physical Review B, 1993
• Observation of optically detected magnetic resonance in GaN films
  Applied Physics Letters, 1993
• The nature of donor conduction in n-GaN
  Journal of Applied Physics, 1993
• GaN, AlN, and InN: A review
  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
• Atomic layer epitaxy of GaN over sapphire using switched metalorganic chemical vapor deposition
  Applied Physics Letters, 1992
• Growth of high optical and electrical quality GaN layers using low-pressure metalorganic chemical vapor deposition
  Applied Physics Letters, 1991
• P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
  Japanese Journal of Applied Physics, 1989
• First order Raman scattering in GaN
  Solid State Communications, 1986
• Absorption, Reflectance, and Luminescence of GaN Epitaxial Layers
  Physical Review B, 1971
• Donor-acceptor pair recombination in GaN
  Solid State Communications, 1971