Noise performance of a low base resistance 200 GHz SiGe technology
- 26 June 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Low noise PHEMT and its MMIC LNA implementation for C-band applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Self-aligned SiGe NPN transistors with 285 GHz f/sub MAX/ and 207 GHz f/sub T/ in a manufacturable technologyIEEE Electron Device Letters, 2002
- Noise behavior in SiGe devicesSolid-State Electronics, 2001
- Extremely low-noise performance of GaAs MESFETs with wide-head T-shaped gateIEEE Transactions on Electron Devices, 1999