Structural properties of electron beam evaporated zinc sulphide thin films
- 1 January 1989
- Vol. 39 (7-8) , 723-725
- https://doi.org/10.1016/0042-207x(89)90024-9
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- ZnS:Mn Electroluminescent Device Prepared by Metal-Organic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1986
- Comparative study of the crystal phase, crystallite size and microstrain in electroluminescent ZnS:Mn films grown by atomic layer epitaxy and electron beam evaporationThin Solid Films, 1983
- Growth and structure of electron-beam evaporated ZnS filmsApplications of Surface Science, 1982
- Microstructure and light emission of ac thin-film electroluminescent devicesJournal of Applied Physics, 1982
- Nodular defects in dielectric multilayers and thick single layersApplied Optics, 1981
- Condensation and stability of ZnS thin films on glass substratesApplied Optics, 1980
- Physical and electrical characterization of co-deposited Zns:Mn electroluminescent thin film structuresJournal of Electronic Materials, 1979
- Optical properties of evaporated films of ZnS in the vacuum ultraviolet from 160 to 2000 AJournal of the Optical Society of America, 1978
- Antireflection Coatings for Germanium and Silicon in the Infrared*Journal of the Optical Society of America, 1958
- Optical Properties of Cadmium Sulfide and Zinc Sulfide from 06 Micron to 14 MicronsJournal of the Optical Society of America, 1955