Device physics of ferroelectric memories
- 1 July 1996
- journal article
- research article
- Published by Taylor & Francis in Ferroelectrics
- Vol. 183 (1) , 51-63
- https://doi.org/10.1080/00150199608224091
Abstract
A status report is given on high-dielectric (usually ferroelectric) thin-films of fine-grained ceramics utilized for ferroelectric memories, including active memory elements in nonvolatile random access memories (NV-RAMs), passive capacitors in dynamic random access memories (DRAMs), and ferroelectric gates in ferroelectric field-effect transistors (FEMFETs) configured for non-destructive read-out (NDRO) memories. Emphasis is upon breakdown fields, leakage current, fatigue, and retention. Both the BaxSr1-xTiO3 (BST) family and the SrBi2Ta2O9 family of layer-structure perovskites are discussed. The review ends with a list of unsolved physics questions about ferroelectric thin films that will be helpful in further engineering developments.Keywords
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