Thermal oxidation of InP and properties of oxide film

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Abstract
Thermal oxidation of InP and properties of oxide films have been studied. Surface orientation dependence of the oxidation rate can be explained by orientation dependence of bond density available for reaction with oxygen molecules. The activation energy of the parabolic rate constant is 2.06 eV, which may be attributed to the value for oxygen diffusion through InP oxide. From the electron diffraction and infrared absorption measurements, it is found that the oxide film is composed of polycrystalline InPO4 (In2O3+P2O5) and that oxides thermally grown at high temperatures, above 620 °C become In rich and form lower oxides, such as In4O2 and In2O, owing to phosphorus evaporation. Resistivities of the thermally grown oxide films at room temperature range from 108 to 109 Ω cm and decrease with an increase in oxidation temperature and time, which may be mainly caused by lack of P2O5 in the oxide film.

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