Fabrication of nanoscale gaps in integrated circuits

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Abstract
Nanosize objects such as metal clusters present an ideal system for the study of quantum phenomena and for the construction of practical quantum devices. Integrating these small objects in a macroscopic circuit is, however, a difficult task. So far, nanoparticles have been contacted and addressed by highly sophisticated techniques not suitable for large-scale integration in macroscopic circuits. We present an optical lithography method that allows for the fabrication of a network of electrodes separated by gaps of controlled nanometer size. The main idea is to control the gap size with subnanometer precision using a structure grown by molecular-beam epitaxy.
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