A simple power diode model with forward and reverse recovery
- 9 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 411-415
- https://doi.org/10.1109/pesc.1991.162708
Abstract
The diode model presented is a simplified physical model for a high-voltage p-i-n structure operating in high level injection, as is typical for most power diodes. The model is an extension of the basic charge-control diode model using the lumped charge concept. The equations for both forward and reverse recovery as well as the emitter recombination are derived from simplified semiconductor charge transport equations. The complete model requires only seven simple equations and three additional device parameters beyond the generic SPICE diode model.Keywords
This publication has 3 references indexed in Scilit:
- A simple diode model with reverse recoveryIEEE Transactions on Power Electronics, 1991
- Diode forward and reverse recovery model for power electronic SPICE simulationsIEEE Transactions on Power Electronics, 1990
- Studies of turn-off effects in power semiconductor devicesSolid-State Electronics, 1985