Hole transit in Teflon films
- 1 May 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 34 (9) , 555-557
- https://doi.org/10.1063/1.90864
Abstract
The transit of excess holes through 25‐μm Teflon films has been observed. The holes are generated by electron‐pulse ionization in the near‐surface region of the samples. From the transit time we determine a mobility of 2×10−9 cm2/V s, independent of field, carrier density, penetration depth of the primary electrons, and length of the electron pulse. Results are discussed in terms of the conventional concept of trap‐modulated mobility and of the alternative theory of dispersive hopping.Keywords
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