The effect of holes on the injection-induced breakdown in n-channel MOSFET's

1 March 1985

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 32 (3) , 722-725
https://doi.org/10.1109/t-ed.1985.22008

Abstract

The holes generated by impact ionization are spread over the vicinity of the source. At high drain biases, the hole density near the source is found to be larger than the impurity doping level by simulation. The highly concentrated holes decrease source potential barrier at high drain voltages and the source current is significantly increased.

Keywords

DOPING
BREAKDOWN
IONIZATION
IMPURITY
HOLES
DRAIN
SPREAD
VICINITY
MOSFET'S
VOLTAGES