Sb-heterostructure interband backward diodes
- 1 July 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 21 (7) , 353-355
- https://doi.org/10.1109/55.847378
Abstract
Backward diodes are a version of Esaki tunnel diodes that are useful for mixing and detection. Ge backward diodes in particular have been used as temperature insensitive, zero bias square law detectors, capable of translating low level RF power into DC voltage or current with extreme linearity and low noise. However, Ge diodes are difficult to reproducibly manufacture and are physically fragile. Here we demonstrate specially designed Sb-heterostructure-based backward diodes grown by molecular beam epitaxy. These diodes have superior figures of merit compared to Ge diodes, especially the current density and junction resistance, and are reproducible and physically rugged. In addition, the flexibility of MBE growth allows easy tailoring of the layer structure to maximize the desired figure of merit for a given application.Keywords
This publication has 5 references indexed in Scilit:
- Methods for measuring the power linearity of microwave detectors for radiometric applicationsIEEE Transactions on Microwave Theory and Techniques, 1995
- On the effect of the barrier widths in the InAs/AlSb/GaSb single-barrier interband tunneling structuresJournal of Applied Physics, 1990
- Interband tunneling in polytype GaSb/AlSb/InAs heterostructuresApplied Physics Letters, 1989
- GaSbAlSbInAs multi-heterojunctionsPhysica B+C, 1983
- Backward Diodes for Low-level Millimeter-Wave DetectionIEEE Transactions on Microwave Theory and Techniques, 1963