Resonant magnetotunneling of GexSi1−x resonant tunneling structures grown at extremely low temperature by molecular-beam epitaxy

Abstract
Resonant tunneling structures of GexSi1−x double barrier quantum wells were grown at different temperatures by molecular-beam epitaxy. Previously, the growth of very thick coherently strained GexSi1−x layers at extremely low temperature and low pressure was reported. Following this technique, strained well GexSi1−x resonant tunneling diodes with high Ge concentration are fabricated. For a strained structure with a higher Ge concentration, it is expected to have higher band offsets and lighter effective masses. A smaller leakage current and a better peak to valley ratio were found for the samples grown at low temperature. From magnetotunneling measurements, the effective masses of heavy and light holes under strain were obtained.

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