Imperfect Oriented Attachment: Dislocation Generation in Defect-Free Nanocrystals
- 14 August 1998
- journal article
- other
- Published by American Association for the Advancement of Science (AAAS) in Science
- Vol. 281 (5379) , 969-971
- https://doi.org/10.1126/science.281.5379.969
Abstract
Dislocations are common defects in solids, yet all crystals begin as dislocation-free nuclei. The mechanisms by which dislocations form during early growth are poorly understood. When nanocrystalline materials grow by oriented attachment at crystallographically specific surfaces and there is a small misorientation at the interface, dislocations result. Spiral growth at two or more closely spaced screw dislocations provides a mechanism for generating complex polytypic and polymorphic structures. These results are of fundamental importance to understanding crystal growth.Keywords
This publication has 15 references indexed in Scilit:
- Hall-petch relation in nanocrystalline solidsPublished by Elsevier ,2003
- Scaling law for structural metastability in semiconductor nanocrystalsBerichte der Bunsengesellschaft für physikalische Chemie, 1997
- Nanocrystalline state and solid state amorphizationMaterials Science and Engineering: B, 1995
- Grain growth in nanocrystalline TiO2 and its relation to vickers hardness and fracture toughnessScripta Metallurgica et Materialia, 1990
- Influence of stacking faults on the spiral growth of polytype structures in micaPhysics and Chemistry of Minerals, 1982
- Some aspects of polytypism in crystalsProgress in Crystal Growth and Characterization, 1978
- A Correlation between Theoretical Screw Dislocations and the Known Polytypes of Silicon CarbideZeitschrift für Kristallographie, 1957
- Polytypism and Growth Mechanism in Zinc SulphideZeitschrift für Kristallographie, 1957
- The growth of crystals and the equilibrium structure of their surfacesPhilosophical Transactions of the Royal Society of London. Series A, Mathematical and Physical Sciences, 1951
- Role of Dislocations in Crystal GrowthNature, 1949