A New Photoacoustic Method to Characterize Wider-Gap Epitaxial Layers on Narrower-Gap Substrates
- 1 February 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (2A) , L61
- https://doi.org/10.1143/jjap.22.l61
Abstract
A new photoacoustic method is demonstrated to determine the principal band gap energy together with higherlying band edges of thin epitaxial layers of Ga1-x Al x As. The output signal intensity is proportional to an optical absorption coefficient at least to the extent of 104 cm-1; correspondingly, a thickness less than 1 µm of epitaxial layers is detected without any processing of as-grown samples.Keywords
This publication has 2 references indexed in Scilit:
- Electron transport and band structure ofalloysPhysical Review B, 1980
- Theory of the photoacoustic effect with solidsJournal of Applied Physics, 1976