On the Temperature Dependence of Majority Carrier Transport in Heavily Arsenic‐Doped Polycrystalline Silicon Thin Films
- 1 March 1989
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 136 (3) , 794-804
- https://doi.org/10.1149/1.2096746
Abstract
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