Effect of Si Doping on Epitaxial Lateral Overgrowth of GaAs on GaAs-Coated Si Substrate
- 1 March 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (3B) , L359-361
- https://doi.org/10.1143/jjap.31.l359
Abstract
By adding an impurity, a GaAs(001) facet was successfully formed on the misoriented substrate and epitaxial lateral overgrowth (ELO) of wide area has been achieved. The largest ELO ratio obtained was 15 and in this case, the thickness of the vertical and lateral directions were 10 µm and 150 µm respectively. Molten KOH etching showed that a dislocation-free region was obtained, except in the region above the seed opening. The width of the dislocated region depends on the growth thickness. To obtain a wide dislocation-free region, it is concluded that the vertical growth rate should be suppressed as compared with the lateral growth rate.Keywords
This publication has 2 references indexed in Scilit:
- Epitaxial lateral overgrowths of GaAs on (001) GaAs substrates by LPE: Growth behavior and mechanismJournal of Crystal Growth, 1990
- Epitaxial Lateral Overgrowth of GaAs on a Si SubstrateJapanese Journal of Applied Physics, 1989