Chapter 6 The Ab Initio Cluster Method and the Dynamics of Defects in Semiconductors
- 1 January 1998
- book chapter
- Published by Elsevier
- Vol. 51, 287-349
- https://doi.org/10.1016/s0080-8784(08)63058-6
Abstract
No abstract availableKeywords
This publication has 87 references indexed in Scilit:
- Interstitial hydrogen and enhanced dissociation of C-H complexes in GaAsPhysical Review B, 1996
- Energy barrier to reorientation of the substitutional nitrogen in diamondPhysical Review B, 1996
- H Interacting with Intrinsic Defects in SiMaterials Science Forum, 1995
- The NNO Defect in SiliconMaterials Science Forum, 1995
- Ab initioinvestigation of the native defects in diamond and self-diffusionPhysical Review B, 1995
- Nitrogen in germanium: Identification of the pair defectPhysical Review B, 1994
- Ab initiocalculations on the passivation of shallow impurities in GaAsPhysical Review Letters, 1990
- Pseudopotentials that work: From H to PuPhysical Review B, 1982
- Defects in diamond: The unrelaxed vacancy and substitutional nitrogenPhysical Review B, 1981
- Reorientation of Nitrogen in Type-Diamond by Thermal Excitation and TunnelingPhysical Review Letters, 1981