Nonlinear Excitation of Density Fluctuations in Anisotropic Semiconductors by Electromagnetic Radiation

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Abstract
A nonlinear (parametric) mechanism for the excitation of electron-density fluctuations by a long-wave-length radiation field is discussed, for anisotropic many-valley semiconductors. Here the electron distribution function is given by many Fermi ellipsoids of revolution not parallel to one another. This gives rise to multimode density oscillations which can be excited nonlinearly by external electric fields. The threshold field for this phenomenon is calculated for realistic semiconductor models.