Electrical characterization of p-type ZnSe

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Abstract
ZnSe epitaxial layers doped with lithium have been found to be p type with resistivities as low as 2.9 Ω cm. The majority‐carrier types of these films were determined using both capacitance‐voltage and potential profiling techniques. The sample resistivities were obtained using ac resistivity measurements and potential profiling. Uncompensated acceptor densities have been measured to be as high as 8×1016 cm−3 using capacitance‐voltage profiling. Current‐voltage traces taken with evaporated and sputtered gold contacts typically show reverse breakdown which is consistent with avalanche breakdown in these materials.