Spin-valve sensors exchange-biased by ultrathin TbCo films

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Abstract
Ultrathin TbCo films are used to exchange‐bias spin‐valve sensors as an alternative to the commonly used FeMn films. Magnetoresistance values of 7.8% and sensitivities of 2.5%/Oe are demonstrated for spin‐valve stripes where the pinned NiFe layer is exchange biased by a 120‐Å thick TbCo film. The exchange field can be fine tuned by changing the TbCo layer thickness. A well‐biased and linear spin‐valve sensor was fabricated, with a height of 2 μm and a trackwidth of 25 μm, where the free layer is biased by the sense current.