Growth conditions of CuBTe2 (B = Ga, In) single crystals by the closed tube chemical vapor transport technique
- 31 July 1983
- journal article
- Published by Elsevier in Materials Letters
- Vol. 2 (1) , 42-44
- https://doi.org/10.1016/0167-577x(83)90029-0
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- CVT growth of CuInS2 and CuGaS2 assisted by VLS mechanismsJournal of Crystal Growth, 1983
- Growth, morphology and impurity characterisation of some I III IV2 sulphides and selenidesProgress in Crystal Growth and Characterization, 1980
- Electrical and optical properties of CuGaTe2Crystal Research and Technology, 1979
- Electrical and optical properties of AgInS2Solid-State Electronics, 1976
- The fabrication of p and n type single crystals of CuInSe2Journal of Crystal Growth, 1973
- Phase diagram of the Cu2Te Ga2Te3 system and semiconducting properties of Cu2Ga4Te7Materials Research Bulletin, 1973
- Preparation and properties of single crystal CuAlS2 and CuAlSe2Journal of Physics and Chemistry of Solids, 1969