Thermal stability of the Cu/Ta/PtSi structures
- 15 June 1990
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 67 (12) , 7348-7350
- https://doi.org/10.1063/1.344521
Abstract
Cu/Ta/PtSi structures are heated between 200 and 700 °C, with Ta as a barrier for improving the thermal stability of Cu/PtSi. A small amount of Cu silicides is observed after a 30‐min anneal in N2‐H2 at 300−400 °C. This is accompanied by an extensive mixing among the components present, and increasing sheet resistances. By comparing with the reactions of the Cu/Ta/Si, Al/Ta/PtSi, and Al/Ta/Si structures, the mechanisms suggested earlier are supported, with the high affinity of Cu toward Si playing a major role for the low thermal stability of the Cu/PtSi structures with and without various barrier layers.This publication has 5 references indexed in Scilit:
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- Formation of copper silicides from Cu(100)/Si(100) and Cu(111)/Si(111) structuresJournal of Applied Physics, 1990
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