Mechanisms proposed to describe electromigration damage in thin film stripes are based on the observations that mass transport in films is controlled mainly by grain boundary diffusion and that irregularities in the boundary network give rise to divergencies in the mass flux. Two such irregularities, for example, are the triple point configuration (three grain junction) and mixed grain size. Calculation of the vacancy supersaturation level at these sites gives a value of about unity, which can allow condensation into voids at heterogeneous nucleating surfaces, but not within pure boundaries. In lieu of void nucleation, vacancies diffuse to the surface where grain boundary grooving takes place, eventually resulting in a hole. Grooving can be restricted by inhibiting surface diffusion, as is shown in the case of silver stripes with a superimposed 100-Å chromium film. Inhibition of boundary electromigration is achieved by either producing a textured film or by adding solute. In the textured film, the boundaries are mostly of tilt type, providing ledges and dislocations perpendicular to the field, thus lowering sensitivity to electromigration forces. A model is presented for solute effects that assumes segregation to boundary ledges and restriction of the matrix atom diffusion flux. Migration of the solute, which is rapid, results in local depletion and higher solvent flux rates in the solute depleted regions. This leads to mass depletion of the solvent. Loss in solute is limited somewhat by the presence of second phase particles which, by dissolving, maintain an equilibrium boundary concentration. Addition of two solutes which form a complex at boundary diffusion sites should tend to restrict depletion of either solute.