[[abstract]]The electrical characteristics of InP grown by molecular beam epitaxy (MBE) using a valved phosphorus cracking cell are presented. Stoichiometric growth of InP was achieved with a beam equivalent pressure as low as 5×10−7 Torr and 1 μm/h InP growth rate. The efficiency of the solid source is high, consuming on average only ∼0.09 g of phosphorus per μm of InP growth with the beam equivalent pressure ∼1.5×10−6 Torr. The conductivity of the unintentionally doped layers is n‐type, with the electrical background concentration primarily dependent upon the valved cell cracking zone temperature. Electrical carrier concentrations at 300 K ranged from 2.9×1015 cm−3 to 3.3×1016 cm−3. The lowest backgrounds were achieved with the lowest cracking zone temperatures. Low temperature photoluminescence shows impurity related emission at 1.383 eV.[[fileno]]2030161010103[[department]]電機工程學