Surface reconstructions for InAs(001) studied with density-functional theory and STM

Abstract
The stability of different surface reconstructions on InAs(001) is investigated theoretically and experimentally. Density-functional theory calculations predict four different surface reconstructions to be stable at different chemical potentials. The two dominant reconstructions are the β2 (2×4) for high As, and the α2 (2×4) for low As overpressure. This trend is confirmed by scanning tunneling microscopy of carefully annealed InAs(001) surfaces. A similar behavior is predicted for GaAs(001).