Gap-coupled InSb/LiNbO3 acoustoelectric convolver operating at 77 K
- 15 September 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (6) , 484-486
- https://doi.org/10.1063/1.90433
Abstract
A gap‐coupled InSb/LiNbO3 acoustoelectric convolver has been fabricated and tested at 77 K. The results suggest the possibility of using a similar structure with a high‐density InSb diode array as an acoustically scanned infrared imaging device. Measurements indicate that near optimum bias, the convolution efficiency was −63 dBm, the convolution output was uniform along the device length to within 1.5 dB, the insertion loss was 26 dB, the 1‐dB compression point occurred at 18 dBm power input, and the efficiency was constant to ⩽ 3 dB over the range 66–70 MHz.Keywords
This publication has 5 references indexed in Scilit:
- Fourier Transform Optical Imaging Using SAW Memory-CorrelatorJapanese Journal of Applied Physics, 1978
- Ion-implanted n- and p-type layers in InPApplied Physics Letters, 1977
- A Detailed Theory of the Acoustic Wave Semiconductor ConvolverIEEE Transactions on Sonics and Ultrasonics, 1977
- High-sensitivity acoustically scanned optical imaging device using charge storage effectApplied Physics Letters, 1976
- Planar InSb photodiodes fabricated by Be and Mg ion implantationSolid-State Electronics, 1975