Preparation and some properties of ZnSnSb2
- 1 November 1973
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 44 (11) , 5165-5166
- https://doi.org/10.1063/1.1662110
Abstract
Hall coefficient and resistivity measurements on ZnSnSb2 grown from a Sn solution show the material to be degenerately doped p type with a carrier concentration of 1019−1021/cm3 depending on growth procedure. The optical absorption coefficient increases gradually over the range 0.4–1.0 eV with structure at 0.7 eV.This publication has 1 reference indexed in Scilit:
- On Electro‐Physical Properties of ZnSnSb2Physica Status Solidi (b), 1969