200 Channel Semiconductor Detectors for X-Ray Computed Tomography
- 1 January 1981
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 28 (1) , 47-49
- https://doi.org/10.1109/TNS.1981.4331137
Abstract
Prototype 200 channel semiconductor detectors for third generation X-ray computed tomography have been developed using surface-barrier diodes fabricated from high-purity n-type silicon. The image reconstruction test was successful, and the relationship between the image quality and the detector characteristics has been studied.Keywords
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