Low-temperature CW operation of GaInAsP/InP surface-emitting laser with circular buried heterostructure
- 4 December 1986
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 22 (25) , 1325-1327
- https://doi.org/10.1049/el:19860911
Abstract
The first CW operation of a GaInAsP surface-emitting laser has been demonstrated at 77 K. The active region was made to form a 15 μm-diameter circular mesa shape and was buried with p—n current-confining layers. The minimum CW threshold current was 19 mA at 77 K, and single-longitudinal-mode oscillation has been achieved.Keywords
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