Influence of central valley effective mass and alloy scattering on transient drift velocity in Ga 1− x In x P 1− y As y
- 13 September 1979
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 15 (19) , 586-588
- https://doi.org/10.1049/el:19790422
Abstract
The instantaneous ensemble-averaged and time-averaged velocity of electrons are presented for Ga0.27In0.73P0.4As0.6, and the results are compared to those for GaAs. The results indicate that both the effective mass in the Γ conduction band and alloy scattering are very critical in determining the transient (or velocity-overshoot) characteristic as well as the static velocity-field characteristic for this quaternary material.Keywords
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