High-power single-mode AlGaAs lasers with bent-waveguide nonabsorbing etched mirrors

This publication has 15 references indexed in Scilit:

• Local mirror temperatures of red-emitting (Al)GaInP quantum-well laser diodes by Raman scattering and reflectance modulation measurements
  Applied Physics Letters, 1992
• Very high-power (425 mW) AlGaAs SQW-GRINSCH ridge laser with frequency-doubled output (41 mW at 428 nm)
  IEEE Journal of Quantum Electronics, 1991
• Full-wafer technology-A new approach to large-scale laser fabrication and integration
  IEEE Journal of Quantum Electronics, 1991
• An AlGaAs laser with high-quality dry etched mirrors fabricated using an ultrahigh vacuum in situ dry etching and deposition processing system
  IEEE Journal of Quantum Electronics, 1988
• Bidirectional beam propagation method
  Electronics Letters, 1988
• A novel high-power laser structure with current-blocked regions near cavity facets
  IEEE Journal of Quantum Electronics, 1987
• High-power GaAlAs window lasers
  Electronics Letters, 1986
• New programmable switched-capacitor filter
  Electronics Letters, 1986
• AlGaAs/GaAs Buried Multiquantum Well Lasers with a Reactive Ion Etched Window Facet
  Japanese Journal of Applied Physics, 1985
• High optical power density emission from a ’’window-stripe’’ AlGaAs double-heterostructure laser
  Applied Physics Letters, 1979