Measurement of optical bistability in an InGaAsP laser amplifier at 1.5 μm

10 October 1985

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 21 (21) , 992-993
https://doi.org/10.1049/el:19850701

Abstract

Measured hysteresis characteristics for an amplifier operating at room temperature are presented and compared with the predictions of a computer model. The onset of optical bistability was seen to occur at input powers of around 2 μW.

Keywords

1.5 MICRONS WAVELENGTH
III-V SEMICONDUCTORS
MEASUREMENT
COMPUTER MODEL
NONLINEAR OPTICS
2 MICROWATT INPUT POWER
OPTICAL BISTABILITY
ROOM TEMPERATURE OPERATION
LASER AMPLIFIER
HYSTERESIS CHARACTERISTICS
SEMICONDUCTOR LASERS
AMPLIFIER CHARACTERISATION
INGAASP