Dopant diffusion in HgCdTe grown by photon assisted molecular-beam epitaxy

Abstract
The results of a systematic study of low temperature diffusion of indium and arsenic under Hg-saturated conditions in HgCdTe epilayers grown by molecular-beam epitaxy (MBE) are reported. Anneal temperatures ranging from 250 to 400 °C were investigated. To our knowledge, this is the first report of indium and arsenic diffusion coefficients at temperatures less than 300 °C. Indium was determined to be more stable to redistribution than arsenic in the MBE layers at the temperatures investigated. During this study, evidence of p-type impurity outdiffusion from the substrate during anneal was discovered. Both copper and silver were observed to segregate into the HgCdTe epilayer during anneal. This latter effect represents a critical problem in the use of CdTe and CdZnTe substrates for material growth, and may be a major factor limiting yield of material and devices.

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