Different generation processes of metastable defects in sp-a-Si:H material by light soaking and keV-electron irradiation

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Abstract
The creation of metastable defects in magnetron sputtered a‐Si:H films by light soaking and keV electron irradiation has been investigated with two different methods. The change in the density of states (DOS) was directly determined using the space charge limited current (SCLC) technique on n+‐i‐n+ structures with semitransparent top contacts. The electron beam induced current (EBIC) technique was used for a detailed study of the defect generation by keV electrons in Schottky diodes. We found that compared to light soaking keV electrons create about four orders of magnitude more defects if the same energy dose is deposited in the device or film. According to our results the defect generation is proportional to the electron dose Io⋅t. A model will be presented which is able to explain the direct generation of metastable defects by electron irradiation via an electronic excitation of the SiH‐complex.