Grain boundary effects on carrier transport in undoped polycrystalline chemical-vapor-deposited diamond
- 20 May 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 68 (21) , 3016-3018
- https://doi.org/10.1063/1.116682
Abstract
A quantitative measure of grain-boundary effects on the carrier transport properties in polycrystalline chemical-vapor-deposited diamond has been obtained using a 10-ns hard x-ray excitation source. Two device geometries were used to gain insight into the extent of grain-boundary effects: one having the applied electric field normal and the other parallel to the grain orientation. The applied electric field intensity was varied to adjust the mean-free carrier drift distance. The degradation in the carrier transport properties at an electric field intensity of 10 kV/cm by the grain-boundary appears to be approximately a factor of two in comparison to the intragrain carrier transport.Keywords
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