Mesures d'impédances en électrochimie des semi-conducteurs: Influence des états de surface
- 30 September 1976
- journal article
- Published by Elsevier in Surface Science
- Vol. 59 (1) , 177-194
- https://doi.org/10.1016/0039-6028(76)90299-5
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Transport in semiconductors with low scattering rate and at high frequenciesSolid-State Electronics, 1973
- Analyse theorique du fonctionnement et de la stabilite d'un systeme potentiostatique a large bande passante avec correction automatique de chute ohmiqueJournal of Electroanalytical Chemistry and Interfacial Electrochemistry, 1971
- Effect of oxygen-deficiency on electrical transport properties of tungsten trioxide crystalsJournal of Solid State Chemistry, 1970
- Surface States at the Single Crystal Zinc Oxide/Electrolyte Interface. I. Impedance MeasurementsBerichte der Bunsengesellschaft für physikalische Chemie, 1970
- The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance TechniqueBell System Technical Journal, 1967
- “Oxygen” Adsorption and Double Layer Capacities; Gold in Perchloric AcidJournal of the Electrochemical Society, 1964
- Some Solid-State Studies of Tungsten Trioxide and Their Significance to Tungsten Bronze TheoryThe Journal of Chemical Physics, 1963
- The Interface between Germanium and a Purified Neutral ElectrolyteJournal of the Electrochemical Society, 1962
- The Charge and Potential Distributions at the Zinc Oxide ElectrodeBell System Technical Journal, 1960
- Domain Structure of WSingle CrystalsPhysical Review B, 1959